By Rino Micheloni

ISBN-10: 9401775109

ISBN-13: 9789401775106

ISBN-10: 9401775125

ISBN-13: 9789401775120

This e-book walks the reader in the course of the subsequent step within the evolution of NAND flash reminiscence know-how, specifically the advance of 3D flash stories, during which a number of layers of reminiscence cells are grown in the comparable piece of silicon. It describes their operating ideas, equipment architectures, fabrication innovations and functional implementations, and highlights why 3D flash is a new technology.

After reviewing marketplace traits for either NAND and stable nation drives (SSDs), the booklet digs into the main points of the flash reminiscence mobilephone itself, overlaying either floating gate and rising cost catch applied sciences. there's a plethora of alternative fabrics and vertical integration schemes available in the market. New reminiscence cells, new fabrics, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D complicated architectures); essentially, each one NAND producer has its personal resolution. bankruptcy three to bankruptcy 7 provide a vast review of the way 3D can materialize. The 3D wave is impacting rising thoughts besides and bankruptcy eight covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D constructions could be a problem for the human mind: this can be method most of these chapters comprise loads of bird’s-eye perspectives and go sections alongside the three axes.

The moment a part of the booklet is dedicated to different vital points, comparable to complicated packaging expertise (i.e. TSV in bankruptcy nine) and mistake correction codes, which were leveraged to enhance flash reliability for many years. bankruptcy 10 describes the evolution from legacy BCH to the latest LDPC codes, whereas bankruptcy eleven offers with probably the most contemporary developments within the ECC box. final yet now not least, bankruptcy 12 appears to be like at 3D flash stories from a method perspective.

Is 14nm the final step for planar cells? Can a hundred layers be built-in in the comparable piece of silicon? Is four bit/cell attainable with 3D? Will 3D be trustworthy adequate for company and datacenter functions? those are a number of the questions that this publication is helping answering through delivering insights into 3D flash reminiscence layout, procedure expertise and applications.

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There is not as clear a direction for DRAM scaling. 16 shows the emerging differences between current and projected NAND and DRAM scaling. 3D scaling is harder to do in higher speed and performance DRAM component technology. DRAM is thus looking at options that include relaxing the specification to get to higher monolithic densities with current CMOS technologies to an earlier introduction of DDR5. The latter seems to emerging as the industry direction. In systems that use DRAM DIMM’s (Dual In-Line Memory) on a separate board, there are other approaches like Load Reduced DIMM (LR-DIMM), which architecturally are similar to the interface chip described in Sect.

Charge Trap (CT) NAND memory cells are considered as one of the most promising technology for 3D integration because of a better scalability than Floating Gate (FG) NAND. Despite the high theoretical potentialities demonstrated by CT memories, several reliability issues affect such technology. Moreover, the transition from 2D to 3D changed the impact of the previously known reliability issues and generated new problems. Recently, in order to overcome such problems, new 3D vertical FG type NAND cell arrays have been proposed with promising performances.

Memory cell technology. Question: will there be convergence to either Charge Trap or Floating Gate technology by the second or third generation of 3D NAND products? • NAND cell economics. Question: when will QLC (4 bits/cell) be introduced to the market, and what will be the specifications of that in comparison to 2D TLC today? • Enterprise SSD’s. Question: who will be the leaders in PCIe SSD’s (client and enterprise) longer term? Will the BYO SSD model become pervasive with large cloud operators?

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3D Flash Memories by Rino Micheloni


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